The research team of Nagoya University in Japan announced that it has made a key breakthrough in the research of the new generation of semiconductor oxide (Ga₂O₃), and successfully produced p-type layers through new technologies, which has passed th...
The research team of Nagoya University in Japan announced that it has made a key breakthrough in the research of the new generation of semiconductor oxide (Ga₂O₃), and successfully produced p-type layers through new technologies, which has passed the bottleneck that has long been plagued by the academic world for the first time.
This article was published in Journal of Applied Physics, so, what is Oxide? It is a wide energy gap semiconductor material that can withstand higher voltage than silicon (Si) and has higher efficiency. Its application potential includes high-power devices such as electric vehicle power systems, renewable energy networks and server power conversion, which can make these systems more power-saving, durable, and reduce heat dissipation needs. In addition, compared with the third generation of semiconductor silicon carbide (SiC) and nitride (GaN), the oxidized pole is more likely to grow large-sized single crystals, so it has cost advantages.
However, the bottles of the oxidized past are able to stabilize n-type layers and cannot form p-type layers, resulting in the inability to truly apply key components such as diopters. To put it simply, n-type layers are like a group of "delivery trucks", full of electronics; p-type layers are like a row of "empty warehouses" to receive electronics. But because the car and the warehouse cannot be combined, the current cannot flow smoothly.
In this study, the team adopted Ni ion implantation, combined with a dual-stage process of "low-oxygen hydroxide treatment" and "high-oxygen annealing", successfully formed a crystallized p-type layer in the oxide and produced functional diodes. Although the performance has been greatly improved compared with the past, the current p-type layer resistivity is still relatively high, and the conductive efficiency must be improved.
▲ After the ionic ion is implanted, it is then subjected to low temperature electrostatic treatment and high temperature annealing to successfully generate a stable p-type layer. (Source: Nagoya University)
Nevertheless, this study has proven that oxidation can break through long-term technical limitations. If the power conduction efficiency can be continuously improved in the future, the oxidation will play a key role in high-energy consumption industries such as electric vehicles, renewable energy and data centers, bringing higher energy efficiency and lower operating costs.
Nagoya University produces gallium oxide pn diodes with double current-handling capacity
